MMBT3906LT1 TRANSISTOR ( PNP) FEATURES ·As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Dissipation 0.3 W TJ, Tstg Junction and Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic= -1mA, IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB= -40 V , IE=0 -0.1 μA Collector cut-off current ICEO VCE= -40 V , IB=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 μA hFE(1) VCE=-1V, IC=-10mA 100 300 DC current gain hFE(2) VCE= -1V, IC=-50mA 60 Collector-emitter saturation voltage VCE(sat) IC=-50 mA, IB=-5mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=- 50 mA, IB=- 5mA -0.95 V Transition frequency fT VCE= -20V, IC= -10mA f=100MHz 250 MHz Delay Time td 35 nS Rise Time tr VCC=-3.0V,VBE=-0.5V IC=-10mA,IB1=-1.0mA 35 nS Storage Time ts 225 nS Fall Time tf VCC=-3.0V,IC=-10mA IB1=IB2=-1.0mA 75 nS