MMBT5551
商品详情
MMBT5551LT1 TRANSISTOR (NPN) FEATURES
Power dissipation
PCM: 0.3 W (Tamb=25℃)
Collector current ICM: 0.6 A Collector-base voltage
V(BR)CBO: 180 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA, IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 160 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6 V
Collector cut-off current ICBO VCB=180V, IE=0 0.1 μA
Emitter cut-off current IEBO VEB= 4V, IC=0 0.1 μA
hFE(1) VCE= 5V, IC= 1mA 80 hFE(2) VCE= 5V, IC=10mA 80 250 DC current gain hFE(3) VCE= 5V, IC=50mA 30 Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB= 5mA 0.5 V Base-emitter saturation voltage VBE(sat) IC= 50 mA, IB= 5mA 1 V
Transition frequency fT VCE=10V, IC= 10mA, f=100MHz 80 MHz DEVICE MARKING MMBT5551LT1=G1
Unit: mm SOT-23
1. BASE
2. EMITTER 3. COLLECTOR
Shenzhen Tuofeng Semiconductor Technology Co., Ltd.
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Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage