2SC1815
商品详情
2SC1815 TRANSISTOR (NPN)
FEATURES
Power dissipation
MARKING : 2SC1815=HF
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 150 mA
PC Collector Power Dissipation 200 mW
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100uA, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 50 V
Collector cut-off current ICEO VCE=50V, IB=0 0.1 uA
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 uA
DC current gain hFE VCE= 6V, IC= 2mA 130 400
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA 0.25 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 10mA 1 V
Transition frequency fT
VCE=10V, IC= 1mA,
f=30MHz
80 MHz
CLASSIFICATION OF hFE
Rank L H
Range 130-200 200-400