MMBT3904LT1 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100 μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6 V Collector cut-off current ICBO VCB= 60V, IE=0 0.1 μA Collector cut-off current ICEO VCE= 40V, IB=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA HFE(1) VCE=1V, IC= 10mA 100 300 DC current gain HFE(2) VCE= 1V, IC= 50mA 60 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC= 50mA, IB= 5mA 0.95 V Transition frequency fT VCE= 20V, IC= 10mA f=100MHz 250 MHz Delay Time td 35 nS Rise Time tr VCC=3.0Vdc, VBE=-0.5Vdc IC=10mAdc, IB1=1.0mAdc 35 nS Storage Time ts 200 nS Fall Time tf VCC=3.0Vdc, IC=10mAdc IB1=IB2=1.0mAdc 50