2SA1015 TRANSISTOR (PNP) FEATURES 􀁺 High voltage and high current 􀁺 Excellent hFE Linearity 􀁺 Low niose 􀁺 Complementary to 2SC1815 MARKING: BA MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 125 ℃ Tstg Storage Temperature -55-125 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100u A, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -100 u A, IC=0 -5 V Collector cut-off current ICBO VCB=-50V , IE=0 -0.1 u A Collector cut-off current ICEO VCE= -50V , IB=0 -0.1 u A Emitter cut-off current IEBO VEB=- 5V, IC=0 -0.1 u A DC current gain hFE VCE=-6V, IC= -2mA 130 400 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100 mA, IB= -10mA -1.1 V Transition frequency fT VCE=-10V, IC= -1mA f=30MHz 80 MHz CLASSIFICATION OF hFE Rank L H Range 130-200 200-400