S8550LT1
商品详情
S8550LT1 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM: 0.3 W (Tamb=25℃)
Collector current
ICM: -0.5 A
Collector-base voltage
V(BR)CBO: -40 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= -100μA, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V
Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 μA
Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 μA
Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 μA
hFE(1) VCE= -1V, IC= -50mA 120 350
DC current gain
hFE(2) VCE= -1V, IC= -500mA 50
Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB= -50mA -0.6 V
Base-emitter saturation voltage VBE(sat) IC=-500 mA, IB= -50mA -1.2 V
Transition frequency fT
VCE= -6V, IC= -20mA
f=30MHz
150 MHz
CLASSIFICATION OF hFE(1)
Rank L H
Range 120-200 200-350
DEVICE MARKING S8550LT1=2TY
Unit: mm
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR