SS8050LT1
商品详情
SS8050LT1 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 0.3 W ( Tamb=25℃)
Collector current
ICM: 1.2 A
Collector-base voltage
V(BR)CBO: 40 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100μA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V
Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA
Collector cut-off current ICEO VCB=20V, IE=0 0.1 μA
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA
hFE(1) VCE=1V, IC= 100mA 120 350
DC current gain
hFE(2) VCE=1V, IC= 800mA 40
Collector-emitter saturation voltage VCE(sat) IC=800mA, IB= 80mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V
Transition frequency fT
VCE=6 V, IC= 20mA
f=30MHz
100 MHz
CLASSIFICATION OF hFE(1)
Rank L H
Range 120-200 200-350
DEVICE MARKING SS8050LT1=Y1
Unit: mm
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR