2SC2714
商品详情
2SC2714 TRANSISTOR (NPN)
FEATURES
Small reverse Transfer Capacitance:Cre=0.7pF(typ.)
Low Noise Figure:NF=2.5dB(typ.) (f=100MHz)
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 4 V
IC Collector Current -Continuous 20 mA
PC Collector Power Dissipation 100 mW
Tj Junction Temperature 125 ℃
Tstg Storage Temperature -55-+125 ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 4 V
Collector cut-off current ICBO VCB=18V,IE=0 0.5 μA
Emitter cut-off current IEBO VEB=4V,IC=0 0.5 μA
DC current gain hFE VCE=6V,IC=1mA 40 200
Transition frequency fT VCE=6V,IC=1mA 550 MHz
Reverse Transfer capacitance Cre VCB=6V,IE=0,f=1MHz 0.7 pF
Noise figure NF VCE=6V,Ic=1mA,f=100MHZ 2.5 5 dB
CLASSIFICATION OF hFE
Rank R O Y
Range 40-80 70-140 100-200
Marking QR QO QY