S9015 TRANSISTOR (PNP) FEATURES 􀁺 High total power dissipation.(PC=0.45W) 􀁺 High hFE and good linearity 􀁺 Complementary to S9014 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.45 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -0.05 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.05 μA DC current gain hFE VCE=-5V, IC= -1mA 60 1000 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V Transition frequency fT VCE=-5V, IC= -10mA f=30MHz 100 MHz CLASSIFICATION OF hFE(1) Rank A B C D Range 60-150 100-300 200-600 400-1000