MMBT5401
商品详情
MMBT5401LT1 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM: 0.3 W (Tamb=25℃)
Collector current
ICM: -0.6 A
Collector-base voltage
V(BR)CBO: -160 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= -100 μA, IE=0 -160 V
Collector-emitter breakdown voltage V(BR)CEO Ic= -1 mA, IB=0 -150 V
Emitter-base breakdown voltage V(BR)EBO IE= -10μA, IC=0 -5 V
Collector cut-off current ICBO VCB=-120V, IE=0 -0.1 μA
Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 μA
HFE(1) VCE= -5V, IC= -1mA 80
HFE(2 DC current gain ) VCE= -5V, IC=-10mA 100 200
HFE(3) VCE= -5V, IC=-50mA 50
Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB= -5mA -0.5 V
Base-emitter saturation
voltage
VBE(sat) IC= -50mA, IB= -5mA -1 V
Transition frequency fT
VCE= -5V, IC= -10mA
f=30MHz
100 MHz