KTC3875 TRANSISTOR (NPN) FEATURES · High hFE · Low noise · Complementary to KTA1504 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 150 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 V Collector cut-off current ICBO VCB= 60V, IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA DC current gain hFE VCE= 6V, IC= 2mA 70 700 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA 0.1 0.25 V base-emitter saturation voltage VBE(sat) IC=100mA, IB= 10mA 1 V Transition frequency fT VCE=10V, IC= 1mA 80 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHZ 2.0 3.5 pF Noise figure NF VCE=6V,IC=0.1mA,Rg=10kΩ,f=1KHZ 1.0 10 dB CLASSIFICATION OF hFE Rank O Y GR BL Range 70-140 120-240 200-400 350-700 Marking ALO ALY ALG ALL