2SC3356 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=10μA, IE=0 20 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1mA, IB=0 12 V Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 3 V Collector cut-off current ICBO VCB= 10 V, IE=0 1 μA Emitter cut-off current IEBO VEB= 1V , IC=0 1 μA DC current gain hFE VCE= 10V, IC= 20mA 50 300 Transition frequency fT VCE=10V, IC= 20mA 6 GHz Noise figure NF VCE=10V, IC= 7mA, f = 1GHz 2 dB CLASSIFICATION OF hFE Marking R23 R24 R25 Rank Q R S Range 50-100 80-160 125-250