S9015LT1 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.1 A Collector-base voltage V(BR)CBO: -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100μA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1mA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA DC current gain hFE(1) VCE=-5V, IC= -1mA 200 1000 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V Transition frequency fT VCE=-5V, IC= -10mA f=30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank L H Range 200-400 400-600 DEVICE MARKING S9015LT1=M6 Unit: mm SOT-23 1. BASE 2. EMITTER 3. COLLECTOR