红外感应IC-芯三七

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红外感应IC

公司名称：: 商斯达(香港深圳北京上海西安)有限公司

发货地点：: 广东省/深圳

产品类别：: 传感器

更新时间：: 2018-09-11

商品详情

供应APD阵列，包括线性APD阵列和矩阵APD阵列。该系列APD雪崩二极管阵列主要用于：激光雷达、激光测距。我们同时供应APD雪崩二极管和APD雪崩二极管模块。

　

Chip	Package	Description
8AA0.4-9	SOJ22GL	APD Array 8 Elements, QE>80% at 760-910nm with NTC
16AA0.13-9	SOJ22GL	APD Array 16 Elements, QE>80% at 760-910nm with NTC
16AA0.13-9	DIL18	APD Array 16 Elements, QE>80% at 760-910nm
16AA0.4-9	SOJ22GL	APD Array 16 Elements, QE>80% at 760-910nm
25AA0.04-9	BGA	APD Array 25 (5x5) elements, QE>80% at 760-910nm with PTC
25AA0.16-9	BGA	APD Array 25 (5x5) elements, QE>80% at 760-910nm with PTC
64AA0.04-9	BGA	APD Array 64 (8x8) elements, QE>80% at 760-910nm with PTC
QA4000-9	TO8Si	Quadrant Avalanche Photodiode, QE>80% at 760-910nm

位敏探测器(PSD)

供应位敏探测器(PSD)，是根据横向光电效应(电压和电流信号随着光斑位置变化而变换的现象)的半导体敏感元件，将照射在光敏面上的光斑强度和位移量转换为电信号，以实现位置探测。

　

Position sensitive diodes (up to 20mm measuring range in two directions)
Type No.		Active area		Rise time	Dimensions
Chip	Package	Size	Area	865nm 10V 50Ω
Chip	Package	mm	mm2	ns
OD3.5-6	SO8	3.5×1	3.5	200	single
OD3.5-6	SMD	3.5×1	3.5	200	single
OD6-6	SO16	6×1	6	200	single
OD6-6	SMD	6×1	6	200	single
DL16-7	CERpin	4×4	16	500	dual a×is
DL16-7	CERsmd	4×4	16	500	dual a×is
DL16-7	LCC10G	4×4	16	500	dual a×is
DL100-7	CERpin	10×10	100	4000	dual a×is
DL100-7	CERsmd	10×10	100	4000	dual a×is
DL100-7	LCC10G	10×10	100	4000	dual a×is
DL400-7	CERpin	20×20	400	4000	dual a×is
DL400-7	CERsmd	20×20	400	4000	dual a×is

四象限探测器(QP)

供应四象限探测器(QP)，由小间隙隔开的四个有效探测区域组成。四象限探测器应用广泛，包括：激光光束的位置测量、其它需要精确调整的光学系统。

　

Series 6 - Quadrant photodiodes (low dark current)
Type No.		Active area		Dark current	Rise time
Chip	Package	Size	Area	10V	850nm 10V 50Ω
Chip	Package	mm	mm2	nA	ns
QP1-6	TO52	Ø1.13	4×0.25	0.1	20
QP5-6 in Stock	TO5	Ø2.52	4×1.25	0.2	20
QP5.8-6	TO5	2.4×2.4	4×1.45	0.4	20
QP10-6 in Stock	TO5	Ø3.57	4×2.5	0.5	20
QP20-6	TO8S	Ø5.05	4×5	1	30
QP50-6	TO8S	Ø7.8	4×12.5	2	40
QP50-6	TO8S flat	Ø7.8	4×12.5	2	40
QP100-6	LCC10G	Ø11.2	4×25	4	40
QP100-6	LCC10S	Ø11.2	4×25	4	40
Series 7 - Quadrant photodiodes (fully depletable)
Type No.		Active area		Dark current	Rise time
Chip	Package	Size	Area	10V	905nm 10V 50Ω
Chip	Package	mm	mm2	nA	ns
QP100-7	LCC10G	10×10	4×25	2	50
Series Q - Quadrant photodiodes (for 1064nm)
Type No.		Active area		Dark current	Rise time
Chip	Package	Size	Area	150V	1064nm 150V 50Ω
Chip	Package	mm	mm2	nA	ns
QP22-Q	TO8S	Ø5.3	4×5.7	1.5	12
QP45-Q	TO8S	6.7×6.7	4×10.96	8	12
QP45-Q	LCC10G	6.7×6.7	4×10.96	8	12
QP100-Q	LCC10G	10×10	4×25	6.5	12
QP154-Q	TO1032i	Ø14.0	4×38.5	10	12
QP154-Q	TO1081i	Ø14.0	4×38.5	10	12

铟镓砷探测器(InGaAs)

供应铟镓砷探测器(InGaAs)，有效探测直径可达3mm，具有低暗电流和高灵敏度的特点，封装形式包括：TO针脚形式和SMD贴片形式。其中，可见光增强模块可选。

　

InGaAs detectors (high sensitivity up to 2600nm)
Type No.		Active area		Dark current	Spectral responsivity		Waveband
Chip	Package	Size	Area	5V	650nm	1550nm	-
Chip	Package	mm	mm2	nA	A/W	A/W	nm
PC0.7-i	LCC6.1	1.0	0.7	2	0.05	0.95	900-1700
PC0.7-i	TO52S1	1.0	0.7	2	0.05	0.95	900-1700
PC0.7-ix	LCC6.1	1.0	0.7	2	0.3	0.95	600-1700
PC0.7-ix	TO52S1	1.0	0.7	2	0.3	0.95	600-1700
PC2.6-i	TO5i	2.0	2.6	10	0.05	0.95	900-1700
PC7.1-i	TO5i	3.0	7.1	25	0.05	0.95	900-1700
InGaAs-2.6	TO18	1.0	0.7	N.A	1.1A/W@2200nm		1200-2600

波长敏感探测器(WS)

供应波长敏感探测器(WS)，利用特定波长在硅基材料的辐射吸收深度来实现。硅晶体两个相互垂直的p-n结的结构特征，特别适合于单色光的波长检测。

　

Wavelength sensitive diodes (particularly suitable for monochromatic light)
Type No.		Dark current	Rise time Diode 1	Rise time Diode 2
Chip	Package	5V	0V 1kΩ	0V 1kΩ
Chip	Package	nA	ns	ns
WS7.56(Discontinued)	PCBA	10	10000	1000
WS7.56	TO5	10	10000	1000
WS7.56	TO5i	5	10000	1000

辐射探测器(RD)

供应辐射探测器(RD)，用于检测原子颗粒。辐射探测器具有高的吸收容量、极低的暗电流、完全耗尽等特点。

　

Detectors for ionizing radiation (silicon radiation detectors)
Type No.		Active area		Dark current	Gamma-energy Eγ
Chip	Package	Size	Area	-	-
Chip	Package	mm	mm2	nA	KeV
X0.5-γ	TO8S	Ø 0.8	0.5	0.005	> 1
X1.8-γ	TO8S	Ø 1.5	1.8	0.01	> 1
X5-γ	TO8S	Ø 2.52	5	0.01	> 1
X10-γ	TO8S	Ø 3.75	10	0.02	> 1
X10-γ	TO8S Sc	Ø 3.75	10	0.02	> 2
X10-6	TO39	Ø 3.57	10	0.5	> 5
X100-7	LCC10	10 x 10	100	5	> 5
X100-7-7.2	CerPin	10 x 10	100	5	> 5

光电管接收模块

供应光电管接收模块(图片左端，右端为其选配电源)，光电二极管、前置放大电路组成，标准配置和TEC制冷可选。该系列探测器模块对电路进行优化，将电磁干扰降到最小；内置前置放大电路可以用示波器或数据采集卡直接读取对应的电压值。TEC制冷模块可选，提高系统的信噪比。根据应用情况，光电二极管可选，包括：UV Si，Vis Si，NIR InGaAs，Extended InGaAs，PbS，PbSe。
　

根据探测器种类、有效探测面积、是否包含TEC制冷，如下型号可供选择：

Photodiode Receiver Module, Si (200-1000nm), 2.5mm

Photodiode Receiver Module, Si (200-1000nm), 5.0mm

Photodiode Receiver Module, Si (200-1000nm), 5.0mm, TE Cooled

Photodiode Receiver Module, Si (200-1000nm), 10.0mm

Photodiode Receiver Module, Si (300-1000nm), 1.0mm

Photodiode Receiver Module, Si (300-1000nm), 2.5mm

Photodiode Receiver Module, Si (300-1000nm), 5.0mm

Photodiode Receiver Module, Si (300-1000nm), 5.0mm, TE Cooled

Photodiode Receiver Module, Si (300-1000nm), 10.0mm

Photodiode Receiver Module, Si (300-1000nm), 11.0mm, TE Cooled

Photodiode Receiver Module, InGaAs (800-1600nm), 3.0mm, TE Cooled

Photodiode Receiver Module, InGaAs(800-1700nm), 1.0mm

Photodiode Receiver Module, InGaAs (1000-1700nm), 3.0mm

Photodiode Receiver Module, InGaAs(1200-2500nm), 1.0mm, TE Cooled

Photodiode Receiver Module, InGaAs(1200-2500nm), 3.0mm, TE Cooled

Photodiode Receiver Module, InGaAs(1200-2600nm), 1.0mm

Photodiode Receiver Module, InGaAs(1200-2600nm), 3.0mm

Photodiode Receiver Module, PbS(1000-2800nm), 2.0mm, TE Cooled

Photodiode Receiver Module, PbSe(1000-4500nm), 2.0mm, TE Cooled

光电管放大器

供应光电管放大器，直接将光电二极管、光电倍增管等电流源的电流信号转换成数字信号。通过切换A/W，可以设置电流值显示或者功率值显示(作为光功率计)。该系列光电管放大器具有如下特点：满量程输入范围从±20nA至±20mA；可变偏压从-14V至14V；LCD显示读数；RS-232串行接口。

　

Specifications
Max input without damage	±25mA
Full scale range	±20nA to 20mA in decade steps, 1pA max. resolution
A/W setting	0.100 to 1.000A/W in increments of .005A/W
Output impedance	100Ω
Bias voltage	Selectable -14V to +14V in 6.5mV increments
Analog ourput port	±2V corresponds to ±20,000 counts of range in use
Noise and Drift	<1pA/5 seconds on most sensitive range
Frequency response(-3dB)	DC to 2KHz, most sensitive range
Frequency response(-3dB)	DC to 40KHz, least sensitive range
Display	4 1/2 digit LCD, 0.4" high
Power requirement	Rechargeable Ni-MH batteries with approximately 10-hours
External supply	85-250VAC, 50-60Hz, <9VA
Dimensions	140mm(W)×63mm(H)×215mm(L)
Weight	0.9kg, excluding external power supply
Operating temperature	0 to +40°C
Accessories provided	RS-232 cable, power supply/charger, operating manual

供应商信息

公司：商斯达(香港深圳北京上海西安)有限公司
联系人：销售部(香港深圳北京上海西安成都武汉等设分公司特价连锁经营）
电话：0755-83376489 83778810 83600718
手机：18927445855微信同号
传真：0755-83376182
Email：xjr5@163.com
QQ：583757894 1295084882
地址：深圳市福田福华路鸿图大厦1602室、2005-2006室;:上海市北京东路668号上海賽格电子市场 : 西安高新开发区20所(导航技术研究所)

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