SSS1N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Features • 1.0A, 600V, RDS(on) = 8.5Ω @VGS = 10 V • Low gate charge ( typical 5.9 nC) • Low Crss ( typical 3.6 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability