􀀹􀀱􀀒􀀖􀀓􀀢􀀒􀀓􀀤􀀑􀀮􀀳 􀀱􀁐􀁘􀁆􀁓􀀁􀀮􀀰􀀴􀀁􀀧􀀦􀀵 􀋗􀀀 P-Channel Power MOS FET 􀋙􀀀 Applications 􀋗􀀀 DMOS Structure 􀋔􀀀Notebook PCs 􀋗􀀀 Low On-State Resistance : 0.3Ω (max) 􀋔􀀀Cellular and portable phones 􀋗􀀀 Ultra High-Speed Switching 􀋔􀀀On - board power supplies 􀋗􀀀 Gate Protect Diode Built-in 􀋔􀀀Li - ion battery systems 􀋗􀀀 SOT - 23 Package 􀋙􀀀 General Description 􀋙􀀀 Features The XP152A12C0MR is a P-Channel Power MOS FET with low on-state Low on-state resistance : Rds (on) = 0.3Ω ( Vgs = -4.5V ) resistance and ultra high-speed switching characteristics. Rds (on) = 0.5Ω ( Vgs = -2.5V ) Because high-speed switching is possible, the IC can be efficiently Ultra high-speed switching set thereby saving energy. Gate Protect Diode Built-in In order to counter static, a gate protect diode is built-in. Operational Voltage : -2.5V The small SOT-23 package makes high density mounting possible. High density mounting : SOT - 23