8205A
商品详情
Dual N-Channel Enhancement Mode Field Effect Transistor
5A,20V.r
S8205A
Features
5A,20V
@ VGS= 4.5 V
rDS(on) = 0.040 @ VGS = 2.5 V.
Dual N-Channel Enhancement Mode Field Effect Transistor
5A,20V.
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS 8 V
Continuous Drain Current ID
Pulsed Drain Current IDM 20 A
Maximum Power Dissipation TA = 25 2.0 W
TA = 70 1.6 W
Thermal Resistance,Junction-to-Ambient R JA 78 /W
Thermal Resistance,Junction-to-Case R JC 40 /W
Jumction temperature and Storage temperature Tj.Tstg -55 to +150
PD
TSSOP-8
Features Unit: mm
DS(on) = 0.025 @ VGS= 4.5 V
rDS(on) = 0.040 @ VGS = 2.5 V.
Dual N-Channel Enhancement Mode Field Effect Transistor
5A,20V.r
S8205A
5 A
1