TIP41A/41B/41C TRANSISTOR (NPN) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 6 A Collector-base voltage V(BR)CBO: TIP41A : 60 V TIP41B : 80 V TIP41C : 100 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT 41A Collector-base breakdown voltage 41B 41C V(BR)CBO Ic= 1mA, IE=0 60 80 100 V 41A Collector-emitter breakdown voltage 41B 41C V(BR)CEO Ic= 30mA, IB=0 60 80 100 V Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 5 V 41A Collector cut-off current 41B 41C ICBO VCB=60V, IE=0 VCB=80V, IE=0 VCB=100V, IE=0 0.4 mA 41A Collector cut-off current 41B 41C ICEO VCE= 30V, IB= 0 VCE= 30V, IB= 0 VCE= 60V, IB= 0 0.7 mA Emitter cut-off current IEBO VEB=5V, IC=0 1 mA hFE(1) VCE= 4V, IC= 0.3A 30 DC current gain hFE(2) VCE=4 V, IC= 3A 15 75 Collector-emitter saturation voltage VCE(sat) IC=6A, IB=0.6A 1.5 V Base-emitter voltage VBE(on VCE= 4V, IC=6A 2 V Transition frequency fT VCE=10V , IC=0.5A f =1MHz 3 MHZ 1 2 3 TO-220 1. BASE 2. COLLECTOR 3. EMITTER Shenzhen Tuofeng Semiconductor Technology Co., Ltd