MMBT2222A TRANSISTOR (NPN) FEATURES 􀁺 Epitaxial planar die construction 􀁺 Complementary PNP Type available(MMBT2907A) MARKING: 1P MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Dissipation 250 mW RΘJA Thermal Resistance, Junction to Ambient 500 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55to+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 10μA, IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO * IC= 10mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0.01 μA Collector cut-off current ICEX VCE=30V,VBE(off)=3V 0.01 μA Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 μA hFE(1) * VCE=10V, IC= 150mA 100 300 DC current gain hFE(2) VCE=10V, IC= 0.1mA 40 hFE(3) * VCE=10V, IC= 500mA 42 Collector-emitter saturation voltage VCE(sat) * IC=500 mA, IB= 50mA IC=150 mA, IB=15mA 1 0.3 V Base-emitter saturation voltage VBE(sat) * IC=500 mA, IB= 50mA IC=150 mA, IB=15mA 2.0 1.2 V Transition frequency fT VCE=20V, IC= 20mA, f=100MHz 300 MHz Delay time td 10 nS Rise time tr VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA 25 nS Storage time tS 225 nS Fall time tf VCC=30V, IC=150mA IB1=-IB2=15mA 60 nS *pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. S O T -2 3 1. BASE 2.EMITTER 3.COLLECTOR