MMBT2907A TRANSISTOR (PNP) FEATURES 􀁺 Epitaxial planar die construction 􀁺 Complementary NPN Type available(MMBT2222A) Marking: 2F MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 mA PD Total Device Dissipation 250 mW RθJA Thermal Resistance Junction to Ambient 500 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO* IC=-10mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -20 nA Base cut-off current IEBO VCE=-3V, IC =0 -10 nA Collector cut-off current ICEX VCE=-30 V, VBE(off) =-0.5V -50 nA hFE(1) VCE=-10V,IC=-150mA 100 300 hFE(2) VCE=-10V,IC=-0.1mA 75 hFE(3) VCE=-10V,IC=-1mA 100 hFE(4) VCE=-10V,IC=-10mA 100 DC current gain hFE(5) VCE=-10V,IC=-500mA 50 VCE(sat)* IC=-150mA,IB=-15mA -0.4 V Collector-emitter saturation voltage VCE(sat)* IC=-500mA,IB=-50mA -1.6 V VBE(sat)* IC=-150mA,IB=-15mA -1.3 V Base-emitter saturation voltage VBE(sat)* IC=-500mA,IB=-50mA -2.6 V Transition frequency fT VCE=-20V,IC=-50mA,f=100MHz 200 MHz Delay time td 10 nS Rise time tr VCE=-30V,IC=-150mA,B1=-15mA 25 nS Storage time tS 225 nS Fall time tf VCE=-6V,IC=-150mA, IB1=- IB2=- 15mA 60 nS