S9012LT1 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic= -1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-40 V, IE=0 -0.1 μA Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA hFE(1) VCE=-1V, IC= -50mA 120 400 DC current gain hFE(2) VCE=-1V, IC=-500mA 40 Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500 mA, IB= -50mA -1.2 V Transition frequency fT VCE=-6V, IC= -20mA f=30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank L H J Range 120-200 200-350 300-400 DEVICE MARKING S9012LT1=2T1 Unit: mm SOT-23 1. BASE 2. EMITTER 3. COLLECTOR