S9018LT1 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.05 A Collector-base voltage V(BR)CBO: 25 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA, IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 18 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 4 V Collector cut-off current ICBO VCB=20V, IE=0 0.1 μA Collector cut-off current ICEO VCE=15V, IB=0 0.1 μA Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 μA DC current gain hFE(1) VCE=5V, IC= 1mA 70 190 Collector-emitter saturation voltage VCE(sat) IC=10mA, IB= 1mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=10mA, IB= 1mA 1.4 V Transition frequency fT VCE=5V, IC= 5mA f=400MHz 600 MHz DEVICE MARKING S9018LT1= J8 Unit: mm SOT-23 1. BASE 2. EMITTER 3. COLLECTOR