MMBT5401LT1 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100 μA, IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO Ic= -1 mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE= -10μA, IC=0 -5 V Collector cut-off current ICBO VCB=-120V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 μA HFE(1) VCE= -5V, IC= -1mA 80 HFE(2 DC current gain ) VCE= -5V, IC=-10mA 100 200 HFE(3) VCE= -5V, IC=-50mA 50 Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB= -5mA -0.5 V Base-emitter saturation voltage VBE(sat) IC= -50mA, IB= -5mA -1 V Transition frequency fT VCE= -5V, IC= -10mA f=30MHz 100 MHz