S8050LT1 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA Collector cut-off current ICEO VCB=20V, IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA HFE(1) VCE=1V, IC= 50mA 120 350 DC current gain HFE(2) VCE=1V, IC= 500mA 50 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA 1.2 V Transition frequency fT VCE=6V, IC= 20mA f=30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank L H Range 120-200 200-350 DEVICE MARKING S8050LT1=J3Y Unit: mm SOT-23 1. BASE 2. EMITTER 3. COLLECTOR