MMBTH10LT1 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.225 W (Tamb=25℃) Collector current ICM: 0.05 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 3 V Collector cut-off current ICBO VCB=25V, IE=0 0.1 μA Emitter cut-off current IEBO VEB= 2V, IC=0 0.1 μA DC current gain hFE(1) VCE=10V, IC= 4mA 60 Collector-emitter saturation voltage VCE(sat) IC=4 mA, IB= 0.4mA 0.5 V Base-emitter voltage VBE(on) VCE= 10V, IC= 4mA 0.95 V Transition frequency fT VCE=10V, IC= 4mA f=100MHz 650 MHz DEVICE MARKING MMBTH10LT1=3EM Unit: mm SOT-23 1. BASE 2. EMITTER 3. COLLECTOR