2N5551 TRANSISTOR（ NPN ） FEATURES ·Switching and amplification in high voltage Applications such as telephony · Low current(max. 600mA) · High voltage(max.180v) MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.6 A PC Collector Dissipation 0.625 W TJ, Tstg Junction and Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100 μA,IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO* Ic= 1mA, IB=0 160 V Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 6 V Collector cut-off current ICBO VCB= 120V IE=0 50 nA Emitter cut-off current IEBO VEB= 4V, IC=0 50 nA hFE（1）* VCE= 5 V, IC= 1 mA 80 DC current gain hFE（2）* VCE= 5 V, IC = 10 mA 80 250 hFE（3） VCE= 5 V, IC= 50 mA 30 IC= 10 mA, IB= 1 mA 0.15 Collector-emitter saturation voltage VCEsat* IC= 50 mA, IB= 5 mA 0.2 V IC= 10 mA, IB= 1 mA 1 Base-emitter saturation voltage VBEsat* IC= 50 mA, IB= 5 mA 1 V Transition frequency fT VCE=10V,IC=10 mA,,f=100MHz 100 300 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 6 pF Input capacitance Cib VBE=0.5V,IC=0,f=1MHz 20 pF Noise figure NF VCE=5V,Ic=0.25mA, f=1KHZ,Rg=1kΩ 8 dB