A1015 TRANSISTOR (PNP) FEATURES 􀁹 Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PD Total Device Dissipation 400 mW TJ, Tstg Junction and Storage Temperature -55-150 ℃ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100μA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO Ic= -0. 1 mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V Collector cut-off current ICBO VCB= -50 V IE=0 -0.1 μA Collector cut-off current ICEO VCE= -50 V IB=0 -0.1 μA Emitter cut-off current IEBO VEB= -5 V, IC=0 -0.1 μA DC current gain hFE(1) VCE= -6 V, IC= -2mA 70 400 Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB= -10 mA -0.3 V Base-emitter saturation voltage VBE(sat) IC= -100 mA, IB= -10mA -1.1 V Transition frequency fT VCE= -10 V, IC= -1 mA f =30MHz 80 MHz Collector Output Capacitance Cob VCB=-10V,IE=0 f=1MHZ 19 pF Noise Figure NF VCE= -6 V, IC= -0.1 mA f =1KHz,RG=10K 6 dB CLASSIFICATION OF hFE(1) Rank O Y GR Range 70-140 120-240 200-400