C1815 TRANSISTOR (NPN) FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous 150 mA PD Total Device Dissipation 200 mW TJ, Tstg Junction and Storage Temperature -55-150 ℃ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100 uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0. 1 mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100 uA, IC=0 5 V Collector cut-off current ICBO VCB= 60 V , IE=0 0.1 uA Collector cut-off current ICEO VCE= 50 V , IB=0 0.1 uA Emitter cut-off current IEBO VEB= 5 V, IC=0 0.1 uA DC current gain hFE(1) VCE= 6 V, IC= 2mA 70 700 Collector-emitter saturation voltage VCE(sat) IC= 100mA, IB= 10 mA 0.25 V Base-emitter saturation voltage VBE(sat) IC= 100 mA, IB= 10mA 1 V Transition frequency fT VCE= 10 V, IC= 1mA f=30MHz 80 MHz Collector Output Capacitance Cob VCB=10V,IE=0 f=1MHZ 3.5 pF Noise Figure NF VCE= 6 V, IC=0.1 mA f =1KHz,RG=10K 10 dB CLASSIFICATION OF hFE(1) Rank O Y GR BL Range 70-140 120-240 200-400 350-700