MPS2222A TRANSISTOR (NPN ) FEATURE Complementary NPN Type available (MPS2907A) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 10uA , IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE= 10uA, IC=0 6 V Collector cut-off current ICBO VCB= 60V, IE=0 10 nA Collector cut-off current ICEX VCE= 60V,VEB(Off)=3V 10 nA Emitter cut-off current IEBO VEB= 3 V, IC=0 100 nA hFE(1) VCE=10V,IC= 150mA 100 300 DC current gain hFE(2) VCE=10V,IC= 0.1mA 40 hFE(3) * VCE=10V, IC= 500mA 42 VCE(sat)(1) * IC= 500mA, IB=50mA 0.6 V Collector-emitter saturation voltage VCE(sat)(2) * IC= 150mA, IB=15mA 0.3 V Base-emitter saturation voltage VBE(sat) * IC= 500mA, IB= 50mA 1.2 V Delay time td 10 nS Rise time tr VCC=30V, VEB(Off)=-0.5V, IC=150mA,IB1=15mA 25 nS Storage time tS 225 nS Fall time tf VCC=30V,Ic=150mA,IB1=IB2=15mA 60 nS Transition frequency fT VCE=20V, IC=20mA, f=100MHz 300 MHz *pulse test CLASSIFICATION OF hFE(1) Rank L H Range 100-200 200-300