MPS2907A TRANSISTOR (PNP) FEATURES Complementary NPN Type available (MPS2222A) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -10 n A Collector cut-off current ICEX VCE=-30V,VEB(off)=-0.5V -50 nA Emitter cut-off current IEBO VEB=-3V,IC=0 -10 nA hFE(1) VCE=-10V,IC=-0.1mA 78 DC current gain hFE(2) VCE=-10V,IC=-150mA 100 300 hFE(3) VCE=-10V,IC=-500mA 52 VCE(sat) IC=-150mA,IB=-15mA -0.4 V Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -0.67 V VBE(sat) IC=-150mA,IB=-15mA -1 V Base-emitter saturation voltage VBE(sat) IC=-500mA,IB=-50mA -1.2 V Transition frequency fT VCE=-20V,IC=-50mA,f=100MHz 200 MHz Delay time td 10 nS Rise time tr VCC=-30V,Ic=-150mA,IB1=-15mA 25 nS Storage time tS 225 nS Fall time tf VCC=-6V,Ic=-150mA, IB1=IB2=-15mA 60 nS CLASSIFICATION OF hFE(2) Rank L H Range 100-200 200-300