MPSA92 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -300 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100μA,IE=0 -300 V Collector-emitter breakdown voltage V(BR)CEO Ic= -1 mA, IB=0 -300 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V Collector cut-off current ICBO VCB= -200 V, IE=0 -0.25 μA Emitter cut-off current IEBO VEB= -5 V, IC=0 -0.1 μA hFE(1) VCE= -10 V, IC=- 1 mA 60 hFE(2) DC current gain VCE= -10V, IC = -10 mA 80 250 hFE(3) VCE= -10 V, IC= -80 mA 60 Collector-emitter saturation voltage VCE(sat) IC= -20 mA, IB= -2 mA -0.2 V Base-emitter saturation voltage VBE(sat) IC= -20 mA, IB= -2 mA -0.9 V Transition frequency fT VCE= -20 V, IC= -10 mA f = 30MHz 50 MHz CLASSIFICATION OF hFE(2) Rank A B1 B2 C Range 80-100 100-150 150-200 200-250