MPSA94 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: -0.2 A Collector-base voltage V(BR)CBO: -400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR) CBO Ic= -100μA, IE=0 -400 V Collector-emitter breakdown voltage V (BR) CEO IC= -1 mA,IB=0 -400 V Emitter-base breakdown voltage V (BR) EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-400V, IE=0 -0.1 μA Collector cut-off current ICEO VCE=-400V, IB=0 -5 μA Emitter cut-off current IEBO VEB= -4V, IC=0 -0.1 μA hFE(1) VCE=-10V, IC=-10 mA 80 300 hFE(2 DC current gain ) VCE=-10V, IC=-1mA 70 hFE(3) VCE=-10V, IC=-100 mA 60 VCE (sat) IC=-10 mA, IB=-1mA -0.2 V Collector-emitter saturation voltage VCE (sat) IC=-50 mA, IB=-5mA -0.3 V Base-emitter saturation voltage VBE (sat) IC=-10 mA, IB= -1 mA -0.75 V Transition frequency fT VCE=-20V, IC=-10mA f =30MHz 50 MHz