S9012 TRANSISTOR (PNP) FEATURE Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range Tj, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1 mA , IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V Collector cut-off current ICBO VCB=- 40V, IE=0 -0.1 μA Collector cut-off current ICEO VCB=-20V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=- 5V, IC=0 -0.1 μA hFE(1) VCE=-4V, IC=-1mA 64 400 DC current gain hFE(2) VCE=-1V, IC= -500mA 40 Collector-emitter saturation voltage VCE(sat) IC= -500 mA, IB= -50mA -0.6 V Base-emitter voltage VBE(sat) IC= -500 mA, IB=- 50mA -1.2 V Transition frequency f T VCE=-6V, IC=-20mA, f=30MHz 150 MHz