S9014 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.4 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 0.1 μA Collector cut-off current ICEO VCE=35V, IB=0 0.1 μA Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 μA DC current gain hFE VCE=5V, IC= 1mA 60 1000 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100 mA, IB= 5mA 1 V Transition frequency fT VCE=5V, IC= 10mA f=30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank A B C D Range 60-150 100-300 200-400 400-1000