SS8550 TRANSISTOR (PNP) FEATURES Power dissipation PCM : 1 W (TA=25℃) : 2 W (TC=25℃) MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1500 mA TJ, Tstg Junction and Storage Temperature -55-150 ℃ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100uA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 μA Emitter cut-off current ICEO VCE=-20V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 uA hFE(1) VCE=-1V, IC=-100mA 85 400 DC current gain hFE(2) VCE=-1V, IC=-800mA 40 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V Base-emitter voltage VBE(on) VCE=-1V, IC=-10mA -1 V Out capacitance CO VCB=-10V, IE=0mA,f=1MHZ 20 pF Transition frequency fT VCE=-10V, IC=-50mA,f=-30MHZ 100 MHz CLASSIFICATION OF hFE(2) Rank B C D D3 Range 85-160 120-200 160-300 300-400