2SD1664 TRANSISTOR (NPN) FEATURES 􀁺 Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 􀁺 Complements to 2SB1132 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector power dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=50μA, IC =0 5 V Collector cut-off current ICBO VCB=20V, IE=0 0.5 μA Emitter cut-off current IEBO VEB=4V, IC=0 0.5 μA DC current gain hFE VCE=3V, IC=100mA 82 390 Collector-emitter saturation voltage VCE(sat) IC=0.5A, IB=50mA 0.4 V Transition frequency fT VCE=5V, IC=50mA, f=100MHz 150 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 15 pF CLASSIFICATION OF hFE Rank P Q R Range 82-180 120-270 180-390 Marking DAP DART DART