2SB1132 TRANSISTOR (PNP) FEATURES 􀁺 Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA 􀁺 Compliments 2SD1664 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -0.5 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.5 μA DC current gain hFE VCE=-3V,IC=-100mA 82 390 Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -0.2 -0.5 V Transition frequency fT VCE=-5V,IC=-50mA,f=30MHz 150 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 20 30 pF CLASSIFICATION OF hFE Rank P Q R Range 82-180 120-270 180-390 Marking BAP BAQ BAR