上海长园维安/深圳市联大电子有限公司(总代理）

廖雪花：电话13670166496  QQ1046342124微信：13670166496（广东办事处）

地址：深圳市龙华区民治布龙路荔苑大厦B座1005室

长园微安一家国内上市公司，拥有英飞凌的技术，散热好，内阻低，温升好，性价比高的一

款国内最具影响力的MOS原厂

1.通态阻抗小，通态损耗小。

由于SJ-MOS的Rdson远远低于VDMOS，在系统电源类产品中SJ-MOS的导通损耗必然较之VDMOS要减少的多。其大大提高了系统产品上面的单体MOSFET的导通损耗，提高了系统产品的效率，SJ-MOS的这个优点在大功率、大电流类的电源产品产品上，优势表现的尤为突出。

同等功率规格下封装小，有利于功率密度的提高。

首先，同等电流以及电压规格条件下，SJ-MOS的晶源面积要小于VDMOS工艺的晶源面积，这样作为MOS的厂家，对于同一规格的产品，可以封装出来体积相对较小的产品，有利于电源系统功率密度的提高。其次，由于SJ-MOS的导通损耗的降低从而降低了电源类产品的损耗，因为这些损耗都是以热量的形式散发出去，我们在实际中往往会增加散热器来降低MOS单体的温升，使其保证在合适的温度范围内。由于SJ-MOS可以有效的减少发热量，减小了散热器的体积，对于一些功率稍低的电源，甚至使用SJ-MOS后可以将散热器彻底拿掉。有效的提高了系统电源类产品的功率密度。

栅电荷小，对电路的驱动能力要求降低。

传统VDMOS的栅电荷相对较大，我们在实际应用中经常会遇到由于IC的驱动能力不足造成的温升问题，部分产品在电路设计中为了增加IC的驱动能力，确保MOSFET的快速导通，我们不得不增加推挽或其它类型的驱动电路，从而增加了电路的复杂性。SJ-MOS的栅电容相对比较小，这样就可以降低其对驱动能力的要求，提高了系统产品的可靠性。

2.节电容小，开关速度加快，开关损耗小。

由于SJ-MOS结构的改变，其输出的节电容也有较大的降低，从而降低了其导通及关断过程中的损耗。同时由于SJ-MOS栅电容也有了响应的减小，电容充电时间变短，大大的提高了SJ-MOS的开关速度。对于频率固定的电源来说，可以有效的降低其开通及关断损耗。提高整个电源系统的效率。这一点尤其在频率相对较高的电源上，效果更加明显

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