北京QPD1022上海军工IC订货13632767652
商品详情
QPD1022代理商 QPD1022价格 QPD1022三周现货 QPD1022订货国宇航芯黄小姐微信13632767652
深圳市国宇航芯科技有限公司
公司主要经销：ADI TI XILINX ALTERA IDT MSC QORVO CREE ON等
产品功能涉及:DSP FPGA A/D转换 D/A转换 MCU DDR MOSFET 微波射频等。
产品用途涉及：航空航天 通信 微波 雷达导弹 战舰 航海等重型设备和高端&高可靠设备。只做原装正品！
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电话0755-84829291 QQ： 1256290132
DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor
Key Features
Frequency Range: DC - 12 GHz
Output Power (P3dB): 11.0 W at 2 GHz
Linear Gain: 24.0 dB typical at 2 GHz
Typical PAE3dB: 68.8 % at 2 GHz
Operating voltage: 32V
Low thermal resistance package
CW and Pulse capable
3 x 3 mm package
The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.
The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. Lead-free and ROHS compliant. Evaluation boards are available upon request.
QPD1018国宇航芯500 Watt, 50 Volt, 2.7 - 3.1 GHz, GaN RF IMFET
QPD1019国宇航芯500 Watt, 50 Volt, 2.9 - 3.3 GHz, GaN RF IMFET
QPD1020国宇航芯30 Watt, 50 Volt, 2.7 - 3.5 GHz, GaN RF Input-Matched Transistor
QPD1022国宇航芯DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor
QPD1025国宇航芯1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
QPD1025L国宇航芯1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
QPD1823国宇航芯1.8 - 2.4 GHz, 220 Watt, 48 V GaN RF Power Transistor
QPD1881L国宇航芯400 Watt, 50 Volt, 2.7 - 2.9 GHz, GaN RF Power Transistor
QPD2194国宇航芯300 Watt, 48 Volt, 1.8-2.2 GHz GaN RF Power Transistor
QPD2195国宇航芯400 Watt, 48 Volt, 1.8 - 2.2 GHz GaN RF Power Transistor
QPD2730国宇航芯2.575 - 2.635 GHz, 220 Watt, 48 V Doherty GaN RF Power Transistor
QPD2731国宇航芯2.5 - 2.7 GHz, 110 Watt / 220 Watt, 48 Volt, Asymmetric Doherty
QPD2793国宇航芯2.62 - 2.69 GHz, 200 Watt, 48 V GaN RF Power Transistor
QPD2795国宇航芯2.5 - 2.7 GHz, 360 Watt, 48 V GaN RF Power Transistor
QPD2796国宇航芯2.5 - 2.7 GHz, 200 Watt, 48 V GaN RF Power Transistor
QPD3601国宇航芯3.4 - 3.6 GHz, 180 Watt, 50 Volt GaN RF Power Transistor
QPD3800国宇航芯3.4 - 3.8 GHz, 85 Watt, 48 V GaN RF Power Transistor
QPD9300国宇航芯30 Watt, 28 Volt, 9.2 - 9.7 GHz, GaN RF IMFET
T1G2028536-FL国宇航芯DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor
T1G2028536-FS国宇航芯DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor
T1G4004532-FL国宇航芯DC - 3.5 GHz, 45 Watt, 32 V GaN RF Power Transistor
T1G4004532-FS国宇航芯DC - 3.5 GHz, 45 Watt, 32 V GaN RF Power Transistor
T1G4012036-FL国宇航芯DC - 3.5 GHz, 120 Watt, 36 - 50 V GaN RF Power Transistor
T1G4012036-FS国宇航芯DC - 3.5 GHz, 120 Watt, 36 - 50 V GaN RF Power Transistor
T1G4020036-FL国宇航芯DC - 3.5 GHz, 2x200 Watt, 50 V GaN RF Power Transistor
T1G4020036-FS国宇航芯DC - 3.5 GHz, 2x200 Watt, 50 V GaN RF Power Transistor
T2G4003532-FL国宇航芯DC - 3.5 GHz, 30 Watt, 32 V GaN RF Power Transistor
T2G4003532-FS国宇航芯DC - 3.5 GHz, 30 Watt, 32 V GaN RF Power Transistor
T2G4005528-FS国宇航芯DC - 3.5 GHz, 55 Watt, 28 V GaN RF Power Transistor
T2G6000528-Q3国宇航芯DC - 6 GHz, 7 Watt, 28 V GaN RF Power Transistor
T2G6001528-Q3国宇航芯DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor
T2G6001528-SG国宇航芯DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor
T2G6003028-FL国宇航芯DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor
T2G6003028-FS国宇航芯DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor
TGF2023-2-01国宇航芯DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-02国宇航芯DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-05国宇航芯DC - 18 GHz, 25 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-10国宇航芯DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-20国宇航芯DC - 14 GHz, 100 Watt Discrete Power GaN on SiC HEMT
TGF2819-FL国宇航芯DC - 4 GHz, 200 Watt, 50 V GaN RF Power Transistor
TGF2819-FS国宇航芯DC - 4 GHz, 200 Watt, 50 V GaN RF Power Transistor
TGF2929-FL国宇航芯DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor
TGF2929-FS国宇航芯DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor
TGF2929-HM国宇航芯DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor
TGF2933国宇航芯DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor
TGF2934国宇航芯DC - 25 GHz, 14 Watt, 28 V GaN RF Transistor
TGF2935国宇航芯DC - 25 GHz, 5 Watt, 28 V GaN RF Transistor
TGF2936国宇航芯DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor
TGF2941国宇航芯DC - 25 GHz, 4 Watt, 28 V GaN RF Transistor
TGF2942国宇航芯DC - 25 GHz, 2 Watt, 28 V GaN RF Transistor
TGF2952国宇航芯DC - 14 GHz, 7 Watt Discrete Power GaN on SiC HEMT
TGF2953国宇航芯DC - 12 GHz, 12 Watt Discrete Power GaN on SiC HEMT
TGF2954国宇航芯DC - 12 GHz, 27 Watt Discrete Power GaN on SiC HEMT
TGF2955国宇航芯DC - 12 GHz, 40 Watt Discrete Power GaN on SiC HEMT
TGF2956国宇航芯DC - 12 GHz, 55 Watt Discrete Power GaN on SiC HEMT
TGF2957国宇航芯DC - 12 GHz, 70 Watt Discrete Power GaN on SiC HEMT
TGF2965-SM国宇航芯0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor
TGF2977-SM国宇航芯DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor
TGF2978-SM国宇航芯DC - 12 GHz, 20 Watt, 32 V GaN RF Transistor
TGF2979-SM国宇航芯DC - 12 GHz, 25 Watt, 32 V GaN RF Transistor
TGF3015-SM国宇航芯0.03 - 3.0 GHz, 10 Watt, 32 V GaN RF Input-Matched Transistor
TGF3020-SM国宇航芯4 - 6 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor
TGF3021-SM国宇航芯0.03 - 4.0 GHz, 30 Watt, 32 V GaN RF Transistor
TQP0102国宇航芯DC - 4 GHz, 5 Watt GaN Power Transistor
TQP0103国宇航芯DC - 4 GHz, 15 Watt GaN Power Transistor
TQP0104国宇航芯DC - 4 GHz, 30 Watt GaN Power Transistor
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