CGHV35120F 价格  CGHV35120F货期 CGHV35120F订货微信133632767652

120-W, 3100 – 3500-MHz, 50 V, GaN HEMT for S-Band Radar Systems

SKU: CGHV35120F

Wolfspeed’s CGHV35120F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CGHV35120F ideal for 3.1 - 3.5 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.

CGHV35120F Features

Rated power = 120 W @ TCASE = 85°C

Drain Efficiency = 62% @ TCASE = 85°C

Transient 100 μsec – 300 μsec @ 20% duty cycle

Internally pre-matched on input, unmatched output

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