35-W, 9.0 – 10.0-MHz, 28 V, GaN MMIC for Radar Power Amplifiers

Cree’s CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA901A035F ideal for 9 – 10.0 GHz Radar & CW amplifier applications. The transistor is supplied in a ceramic/metal flange package.

CMPA901A035F Features

50-ohm matched

40 W typical Pout

34 dB Typical Small Signal Gain

28 V Operation

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