PD84010-E  Features

Excellent thermal stability

Common source configuration

POUT = 10 W with 14.3 dB gain @ 870 MHz /

7.5 V

Plastic package

ESD protection

In compliance with the 2002/95/EC European

directive

Description

The PD84010-E is a common source N-channel,

enhancement-mode lateral field-effect RF power

transistor. It is designed for high gain, broadband

commercial and industrial applications. It

operates at 7.5 V in common source mode at

frequencies of up to 1 GHz. PD84010-E boasts

the excellent gain, linearity and reliability of ST’s

latest LDMOS technology mounted in the first true

SMD plastic RF power package, PowerSO-10RF.

PD84010-E’s superior linearity performance

makes it an ideal solution for portable radio

applications.

制造商: STMicroelectronics

产品种类: 射频金属氧化物半导体场效应(RF MOSFET)晶体管

晶体管极性: N-Channel

Id-连续漏极电流: 8 A

Vds-漏源极击穿电压: 40 V

技术: Si

增益: 14.3 dB

输出功率: 10 W

最小工作温度: - 65 C

最大工作温度: + 150 C

安装风格: SMD/SMT

封装: Tube

配置: Single  

高度: 3.5 mm  

长度: 7.5 mm  

工作频率: 1 GHz  

类型: RF Power MOSFET  

宽度: 9.4 mm  

商标: STMicroelectronics  

通道模式: Enhancement  

Pd-功率耗散: 95 W  

工厂包装数量: 400  

Vgs - 栅极-源极电压: 15 V  

The PowerSO-10 plastic package, designed to

offer high reliability, is the first ST JEDEC

approved, high power SMD package. It has been

specially optimized for RF needs and offers

excellent RF performances and ease of assembly.

PD84010-E PowerSO-10RF (formed lead)

PD84010TR-E PowerSO-10RF (formed lead)

PD84010STR-E PowerSO-10RF (straight lead)